Abstract
The effect of the channel dopant distribution on the effective channel length (LEFF) of metal–oxide–semiconductor field-effect transistors (MOSFETs) extracted by the channel resistance method (CRM) is studied using simple device models and experimental data. The simple device models explain how the channel dopant distribution affects extracted LEFF. The measured data for various channel structures are qualitatively explained using those models. It is found that an accurate LEFF can probably be extracted if plural samples having different dopant densities can be prepared.
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