Abstract
In this work is presented an analysis of the substrate influences on the effective channel length and series resistance extraction method in fully depleted enhancement-mode Silicon-On-Insulator (SOI) nMOSFETs operating at nitrogen temperature. This analysis was supported by a comparison between the results obtained by MEDICI numerical bidimensional simulations results and by analytical expressions solution. The effective channel length extraction method is significantly influenced by the substrate potential drop. However, the substrate influence on the series resistance extraction method can be considered negligible in all studied conditions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
