Abstract
TiO2/PbS(CdS) quantum dots (QDs) bulk heterojunction has been fabricated by successive ionic layer adsorption and reaction method via alternate deposition of PbS and CdS QDs. In comparison with TiO2/PbS heterojunction, the incident photon to current conversion efficiency was increased almost 50% in the visible region. Meantime, the short-circuit current and open-circuit voltage were enhanced 200% and 35% respectively. The influence mechanism of CdS is related to reduction of trap state density at TiO2/PbS interface and PbS QDs surface by the discussion of the dark current density–voltage curves, the transient photocurrent response curves and the electrochemical impedance spectra spectroscopy (EIS).
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