Effect of carbon doping on oxygen precipitation behavior in internal gettering processing for Czochralski silicon

Abstract

The effect of carbon doping on oxygen precipitation behavior in internal gettering processing for Czochralski silicon (Cz-Si) has been investigated. Through high–low–high anneals in argon ambient, it has been shown that both good-quality denuded zone and high-density bulk microdefects (BMDs) could be formed in high carbon content (H[C]) Cz-Si wafer. Meanwhile, the density of BMDs in H[C] Cz-Si crystal was a little higher compared with that in the Cz-Si crystals with lower carbon content or without carbon doping. The concentration of substitutional carbon almost remained during the whole thermal cycles. Moreover, the [C i–O i]C(3) centers with low concentration were detected by infrared spectroscopy. Weak effect of carbon on oxygen precipitation in H[C] Cz-Si during internal gettering processing is considered. Based on the experimental results, H[C] Cz-Si crystal is suggested to be one of silicon materials used for larger scale integrated circuit fabrication.