Abstract
The thermal stability of the denuded zone (DZ) created by high–low–high-temperatureannealing in high carbon content (H[C]) and low carbon content (L[C]) Czochralskisilicon (Cz-Si) has been investigated in a subsequent ramping and isothermal1050 °C annealing. The tiny oxygen precipitates which might occur in the DZ werechecked. It was found in the L[C] Cz-Si that the DZ shrank and the densityof bulk micro-defects (BMDs) reduced with the increase of time spent at1050 °C. Also, theDZs above 15 µm of thickness present in the H[C] Cz-Si wafers continuously and the density and total volumeof BMDs first decreased then increased and finally decreased again during thetreatments. Moreover, tiny oxygen precipitates were hardly generated inside the DZs,indicating that H[C] Cz-Si wafers could support the fabrication of integrated circuits.
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