Abstract
Photoluminescence measurements have been used to investigate the optically active defect centers formed by silicon implantation and a subsequent anneal at 275, 400, or 525 °C. The presence of boron in p-type silicon is found to produce deleterious effects on the luminescence of the interstitial-related W- and X-centers as well as a lower energy broad luminescence band. This effect has not been previously reported but it is consistent with the suppression of interstitial-related {311} extended defect formation in the presence of high boron concentrations at higher annealing temperatures. The results presented in this letter provide insight into the role of boron in the initial stages of interstitial cluster formation.
Published Version
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