Abstract
Isothermal capacitance transient spectroscopy (ICTS) has been used to measure majority-carrier capture cross section of nickel centers in silicon. Capture cross sections obtained are temperature-independent with values of 3.2×10-17 cm2 for electron capture at the nickel acceptor center in n-type silicon and 1.8×10-16 cm2 for hole capture at the nickel donor center in p-type silicon. These capture cross sections are associated with the neutral capture of the majority carriers at the amphoteric nickel centers.
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