Abstract
Mg0.2Zn0.8O thin films for resistance random access memory application were prepared on ITO glass substrates by sol–gel method, and the effect of annealing temperature on resistance switching behavior has been studied. With the increase of annealing temperature, the crystallinity of Mg0.2Zn0.8O thin films can be improved, the turn on voltage, the turn off voltage, the resistance of low resistance state and the resistance ratio of high resistance state to low resistance state showed an increasing, but the endure of switching cycles decreased and the resistance of high resistance state exhibited a degradation.
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