Abstract
We report the fabrication of InN nanostructure sensitive photodetector grown expitaxially on a silicon (110) substrate by RF sputtering at room temperature. X-ray diffraction measurement shows that the deposited InN film has (101) preferred growth orientation and wurtzite structure. The platinum (Pt) Schottky contact was deposited via thermal vacuum evaporation (10−5 Torr) by using a metal semiconductor metal (MSM) mask. Measurements utilizing the IR source indicate that the barrier height as well as the ideality factor are temperature dependent. The use of (110) orientation of silicon has the potential of increasing the detector quality with electronics intrinsically higher electron mobility. Such systems are interesting for optoelectronic applications in the IR region.
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