Effect of Annealing Temperature of Magnesium Doped Zinc Oxide Nanorods Growth on Silicon Substrate

Abstract

Magnesium (Mg)-doped zinc oxides (ZnO) have been prepared on a silicon substrate by using the solution-immersion method. The nanorods films were annealed at different temperature 0°C, 250°C, 500°C respectively for 1 hour. The XRD diffraction indicated that the Mg-doped ZnO nanorods have good crystallinity with a hexagonal wurzite structure preferentially oriented along the (002) direction. PL spectroscopy at room temperature shows strong UV peaks appearing at 383 nm when annealed at 250°C. The intensity of broad emission peaks increases with increasing annealing temperature to 500°C which is possibility attributed to intrinsic defects.