Abstract
A double-step annealing profile has been used to synthesize germanium nanodots embedded in silicon oxide matrix with low defects, good crystallinity, good size distribution, and shape. A significant reduction in the photoluminescence was observed for samples annealed at temperature higher than 900 °C. The improved crystallinity of the nanodots synthesized via the double-step annealing process was investigated using Raman spectroscopy and transmission electron microscopy diffraction patterns. A mechanism of growth at different annealing temperature profiles is proposed. The optimum annealing profile was 1000 °C for 300 s followed by 700 °C for 60 s. The mean diameter of the dots at such annealing condition was found to be 9.5±1.6 nm with an area density of ∼5×1011 cm−2.
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