Abstract
Surface morphology, structural and optical properties of CuInS 2 thin films grown by the single source thermal evaporation in vacuum have been studied. The films were annealed from 250 to 550 °C in argon atmosphere with low oxygen concentration (O 2 < 2 ppm). CuInS 2 films are characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) and optical transmittance and reflectance spectra. The maximum grain size of the sample after annealing at 550 °C was over 150 nm. The electron dispersion spectroscopy and X-ray analysis concludes that the polycrystalline CuInS 2 thin film after annealing above 200 °C were sulphur-poor. We obtain CuInS 2 layers with high structural and optical quality at annealing temperature above 450 °C with formation of In 2 O 3 as minority phase. The band gap energy of the CuInS 2 films after annealing above 450 °C was about 1.50 eV which perfectly matches the solar spectrum for energy conversion.
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