Abstract
The annealing behavior (up to 500°C) of semi-insulating GaAs implanted with 2×1014 Si ions/cm2 at 200 keV has been investigated by measuring the sheet resistivity, Hall effect and optical absorption. In the samples annealed at temperatures below 450°C, the sheet resistivity, Hall mobility and optical absorption show the characteristics of amorphous semiconductors. The sample annealed at 500°C recovers to a partially-compensated n-type semiconductor, and the Hall mobility can be explained as scattering due to residual defects.
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