Abstract
We used ion implantation as an alternative technique to epitaxial deposition to synthesise and to dope Si 1− x Ge x alloy layers. The influence of Ge content ( x=0–0.09) upon sheet resistance and Hall mobility was investigated for high concentrations of As (1×10 20 As + cm −3) implanted at 100 keV. The experiment was conducted using bulk-Si and silicon on insulator substrates. Some material was also post-amorphised by implanting 5×10 15 Si + cm −2 at 250 keV. Samples were thermal annealed at 700 °C for 20 min, at 700 °C for 20 min plus 1050 °C for 10 s (RTA) and RTA only to achieve solid phase epitaxial growth and dopant activation. Sheet resistance and Hall mobility were measured at room temperature with the Van der Pauw method. Under all the annealing conditions, we observed a reduction in sheet resistance with increasing Ge content up to x=0.04; for higher Ge peak concentration, the sheet resistance increased. On the other hand, Hall mobility appeared to be insensitive to the Ge content. Depth profiles were obtained using spreading resistance profiling, which enabled the dopant activation and differential profile broadening to be determined.
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