Abstract
We have investigated the effects of rapid thermal annealing on the electrical and optical properties of planar-doped AlGaAs/InGaAs/GaAs high electron mobility transistor structures grown by molecular beam epitaxy. Hall effect and photoluminescence measurements on samples with In0.22Ga0.78As and In0.28Ga0.72As channels reveal a temperature-dependent degradation in sheet charge density, Hall mobility, and photoluminescence response. The structures were essentially stable through the temperature range used in normal device processing. However, annealing temperatures greater than 700 °C resulted in strain relaxation and layer intermixing, especially for the In0.28Ga0.72As sample.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
