Abstract
Iam glad to introduce Dr. Oscar Huerta as a new TDMR Editor. Dr. Huerta is an expert on device physics, degradation, reliability, characterization, and modeling. He got his Ph.D. title for INAOE, Mexico, in 2019, with the thesis “ Charge-trapping dynamics in MOSFETs: An experimental approach with magnetic fields. ” He has seven years of experience in academia and industry, and has spent time at the Tempere University of Technology, Finland, and the University of Granada, Spain. He is currently with GlobalFoundries, Malta, NY, USA, working for the reliability team on advanced CMOS technologies.
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