Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure

Abstract

Thermal donor formation in Czochralski-grown silicon heat treated at T=450 °C under hydrostatic pressure is investigated by means of optical and electrical measurements. It has been shown that oxygen agglomeration processes in stressed Cz-Si lead to an enhanced formation of the well-known thermal double donors. This effect is believed to be due to increasing oxygen diffusivity under stress. Some important differences between the formation processes in Cz-Si annealed under normal conditions and high hydrostatic pressure are discussed.