Abstract
The hydrogen-plasma-accelerated formation of shallow thermal donors in silicon has been studied for a wide range of doping density and interstitial oxygen content [Oi] by electrical and spectroscopic techniques. The plasma-hydrogenated material has been heat treated for different times in the temperature range of 275 to 500 oC. It is shown that besides Oxygen Thermal Donors (OTDs) also hydrogen related Shallow Thermal Donors (STDHs) play a crucial role in the hydrogen-assisted creation of excess carriers. The impact of different factors on the introduction rate of the shallow donors will be discussed, whereby a strong role is played by the doping density and type, i.e., the Fermi level position during the thermal anneal in air. Generally, shallow donor formation is faster in p- compared with n-type Si, which is associated with the different charge state of H. From combined Deep Level Transient Spectroscopy (DLTS) and Fourier Transform Infrared (FTIR) absorption spectroscopy it is concluded that the additional free carriers are contributed by both STDH and OTD centers, so that H not only plays a catalytic role but actively takes part in the donor formation, depending on the experimental conditions. Finally, from our data some conclusions can be made regarding the nature of the STDHs, which is still a matter of debate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.