Abstract
The early stages of iron precipitation in p-type float-zone silicon have been studied by means of Deep Level Transient Spectroscopy, DLTS, for iron concentrations in the range of 1014 – 3 × 1015 cm3. A DLTS line showing the signatures of extended localized states is observed. The emission characteristics of the associated defect is very similar to that of the interstitial iron donor. It is concluded that large clusters consisting of interstitial iron atoms give rise to the observed DLTS line. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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