E28 固定砥粒によるシリコンウェハの薄片化に関する技術(OS7 研削・砥粒加工(2))

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The demand for ultra-thin silicon wafers has escalated in recent years with the rapid development of potable and highly functional electronic devices. Normally, stress relief by free-abrasives is essential when the wafers are thinned down to or less than 100 μm. However, free-abrasive processes encounter problems including 10w productivity, degradation in flatness and burden on the environment. This study aims to developing a thinning process which is capable of thinning 8-inch wafers less than 20 μm by complete use of fixed-abrasive machining technology. This paper reports experimental results obtained at the primary stage.