Abstract
In the present work, Seebeck coefficient and Figure of merit in terms of thermoelectric, electric, and thermal scattering rates employing powerful technique of memory function formalism in graphene system are investigated. This study leads to the dynamical thermoelectric transport behavior of graphene subjected to electron–phonon interactions using linear response theory. Within premises, explicit expression of generalized Drude scattering rate or imaginary part of memory function associated with thermoelectric/electric/thermal functions is studied. In zero frequency (DC regime) and low-temperature limit, Seebeck coefficient shows the linear-T dependence and, is found to be good in agreement with the experimental and theoretical results. Further, several frequency and temperature dependent transport coefficient results for electron–phonon scattering in graphene are performed. We found that S(ω,T) shows saturation at ω≫ωBG and raises with temperature below the Bloch–Grüneisen (BG) frequency regime (ω≪ωBG). We numerically investigated thermoelectric Figure of merit (ZT) with frequency/temperature domains and discussed.
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