Abstract
We investigated the effect of active layer thickness on dynamic threshold voltage (V TH ) operation for double-gate (DG) amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that with 80 nm a-IGZO layer, by adjusting top gate (TG) biases from negative to positive, the bottom gate (BG)-sweep TFTs show V TH dependence on TG bias with two linear relationships, and subthreshold swing (SS) varies with different TG biases. In contrast, with thinner (20 nm) a-IGZO layer, V TH of the BG-sweep TFTs is linearly modulated with a single slope, and no obvious SS change is observed.
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