Abstract
In this paper, we report the characteristics of InAs/InP quantum dashes (QDash) based lasers emitting around 1.55 μm. An unprecedented high modal gain of ∼100 cm−1 is obtained for an optimized active structure by stacking 12 QDash layers. Directly modulated lasers allowed achieving a modulation bandwidth of ∼10 GHz and a Henry factor around 5. Thanks to p-type doping, the Henry factor value is reduced down to 2.7 while the modulation bandwidth still amounts to ∼10 GHz. This shows that doping of the active region is important to improve the dynamic characteristics of QDash lasers.
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