Abstract
We investigated the enhanced oxidation effect of using silicon (Si) implanted with fluorine (F), iodine (I), and xenon (Xe) before gate oxidation. I and Xe, which result in shallower implants because of their higher mass numbers, were expected to be less damaging to the Si substrate. The resultant increase in oxide thickness was found to be 20%, 80%, and 50% under F, I, and Xe implantations with a dose of 5×1014 cm-2, respectively. We found that F atoms outdiffuse to their ambient through SiO2, and that I implantation causes the greatest increase in oxide thickness. In addition, F implantation shows highly reliable dielectric characteristics, low contact resistance, and a low junction leakage current. Consequently, the F implantation process is capable of providing reliable dual-thickness gate oxide for embedded dynamic random access memories (DRAMs).
Published Version
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