Abstract
A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects: a polarization-induced band discontinuity and a resistive barrier originating from excellent insulation properties of BGaN. Compared to conventional AlGaN/GaN HEMTs, structures grown with BGaN back-barrier showed a significant improvement of static performances, transport properties, and trapping effects involving a limited current collapse in dynamic regime. A DC maximum current increase of 58.7% was observed.
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