Analysis and characterization of thermal transport in GaN HEMTs on Diamond substrates

Abstract

The emergence of Gallium Nitride-based High Electron Mobility Transistor (HEMT) technology has proven to be a significant enabler of next generation RF systems. However, thermal considerations currently prevent exploitation of the full electromagnetic potential of GaN in most applications, limiting HEMT areal power density (W/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) to a small fraction of electrically limited performance. GaN on Diamond technology has been developed to reduce near junction thermal resistance in GaN HEMTs. However, optimal implementation of GaN on Diamond requires thorough understanding of thermal transport in GaN, CVD diamond and interfacial layers in GaN on Diamond substrates, which has not been thoroughly previously addressed. To meet this need, our study pursued characterization of constituent thermal properties in GaN on Diamond substrates and temperature measurement of operational GaN on Diamond HEMTs, employing electro-thermal modeling of the HEMT devices to interpret and relate data. Strong agreement was obtained between simulations and HEMT operational temperature measurements made using two independent thermal metrology techniques, enabling confident assessment of peak junction temperature. The results support the potential of GaN on Diamond to enable a 3X increase in HEMT areal dissipation density without significantly increasing operational temperature. Such increases in HEMT power density will enable smaller, higher power density Monolithic Microwave Integrated Circuits (MMICs).