Dual workfunction tunnel field-effect transistor with shifted gate for ambipolar suppression and ON current improvement

Abstract

This paper explains the dual workfunction tunnel field effect transistor with sifted gate over the source region that creates a condition of overlapping over source and underlapping by drain simultaneously to get the suppressed ambipolar behaviour with enhancement in ON current of the device. Overlapping over the gate enhances ON current by reduction in the tunneling barrier at source channel interface whereas ambipolar conduction reduction is take place by the underlapping near the drain/channel interface due to the increment the depletion layer width.