Abstract
We have experimentally demonstrated ON current enhancement and variability suppression of Si tunnel FETs (TFETs) by introducing an isoelectronic trap (IET) beryllium into the channel. In the previous studies, it was showed that the introduction of the Al-N IET impurity enables those requirements for Si-TFETs. In this study, we focused on Be as a new IET impurity and introduced the new IET into Si-TFETs. We found the optimum conditions for the formation of the Be-IET state in Si and demonstrated process integration of the Be-IET formation and TFET fabrication. The Be-introduced TFET exhibits five times enhancement of ON current; this enhancement ratio is larger than the case of the Al-N IET. Furthermore, significant suppression of the variability is achieved by Be-IET as well as the previous case of the Al-N IET. This better ON current improvement by Be-IET results from the energy level of Be deeper than that of Al-N IET, which plays a better role in enhancing the performance of Si-TFETs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.