Abstract
Hole mobility is significantly higher for silicon MOSFETs with channels along a <110> direction on the (110) plane than the usual (100) plane. Formation of (110) PMOS and (100) NMOS transistors is possible through use of Dual Substrate Orientation (DSO) integration. This paper describes a CMOS integration scheme to achieve bulk (110) PMOS and SOI (100) NMOS devices on the same substrate. Transistor results indicate a 130% improvement in PMOS Id,lin and 90% enhancement in Id,sat for long channel devices. Hole mobility and drive current anisotropy along the <110> and <100> channels on (110) plane was observed. There was no gate leakage or sub-threshold slope degradation indicating that the DSO integration results in high quality Si/SiON dielectric interfaces. PMOS enhancement from compressive channel stress is additive to that of orientation and compatible with the DSO integration.
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