Abstract
The temperature dependence of the manganese magnetic moment and the spin-lattice relaxation rate measured by the muon spin relaxation technique in the magnetically ordered phase of the chiral intermetallic cubic MnSi system are both explained in terms of helimagnon excitations of a localized spin model. The two free parameters characterizing the helimagnon dispersion relation are determined. A combined analysis of the two data sets cannot be achieved using the self-consistent renormalization theory of spin fluctuations which assumes the magnetism of MnSi to arise uniquely from electronic bands. As a result of this work, MnSi is proposed to be a dual electronic system composed of localized and itinerant magnetic electrons. Finally we note that the analysis framework can be applied to other helimagnets such as the magnetoelectric compound Cu2OSeO3.
Highlights
The history of the metallic compound MnSi is quite rich and spans almost 90 years
A combined analysis of the two data sets cannot be achieved using the self-consistent renormalization theory of spin fluctuations which assumes the magnetism of MnSi to arise uniquely from electronic bands
We have found that the combined quantitative analysis of m(T ) and λZ (T ) at low temperature can be performed within the framework offered by the helimagnon excitations which derive from a localised electron picture
Summary
The history of the metallic compound MnSi is quite rich and spans almost 90 years. Its crystal structure was established in 1933 [1]. The magnetic structure at low temperatures was recently refined from zero-field data recorded with the muon spin rotation/relaxation (μSR) technique [14]. It deviates from the originally purported pure helical magnetic structure; see Refs. This report provides a consistent interpretation based on helimagnon excitations of the quadratic and linear temperature dependencies, at low temperature, of the manganese magnetic moment m and the muon spin-lattice relaxation rate λZ , respectively; see Fig. 1 for the data and fits.
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