Abstract
In this study, etching characteristics of TaN for barrier-layer and SiO 2 for hard mask were investigated by using the inductively coupled Cl 2 -based plasma. Dry etching of the TaN was studied by varying Cl 2 /Ar gas mixing ratio. The results showed that the best condition for the etch rate was at the Cl 2 only gas plasma. The chemical reaction on the surface of the etched TaN was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the surface of etched TaN thin film.
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