Abstract
We investigated the dry-etching mechanism of the TiN thin film using a /Ar inductively coupled plasma system. To understand the effect of the /Ar gas mixing ratio, we etched the TiN thin film by varying /Ar gas mixing ratio. When the gas mixing ratio was 100% , the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.
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