Abstract
The F2-cell sized 1diode-1resistive switching memory (1D1R) crossbar accompanied by excellent rectifying characteristics is presented. Each diode and memory comprising the 1D1R is fabricated at room temperature, which is optimized for the integration of stacked layers excluding the thermal disruption issues over repetitive stacking procedures. The maximum rectifying ratio of 1.4x109 (at the reading voltage 2V) in the low resistance state of RS memory was achieved in a planar 2x2 um2 crossbar, which is the highest value for the rectifying ratio obtained in the RS memory devices reported to date, and enough to apply in ultra-high density CBA of up to 1Gb. A reliable memory operation with the window of ~103 - 104 based on unipolar RS phenomenon in the TiO2 switching layer is observed from operation current of a few hundred μA for set and a few mA for reset process, respectively, which means relatively lower operation power compared to those in the previously reported TiO2 URS system.The structural and chemical analysis for such low power, highly rectifying property based on SEM, TEM, EDS, XRD was also provided. Furthermore, Resistive switching random access memory (RRAM) operation of erasing, programming, and reading a selected cell not being interrupted by sneak currents from neighboring cells was demonstrated in a 4x4 crossbar array with double-layers 3D stakced device structure.
Published Version
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