Abstract
Investigation of the d.c. electrical behavior of semiconductor P + πN + double injection devices is presented. The samples studied were fabricated from indium-doped silicon partially compensated by shallow donor impurities and were biased into the double injection (post-breakdown) regime at a temperature of 77°K. A numerical computer solution of the steady-state characteristic has been completed in order to explain the experimental d.c. data. The analysis reveals that electron-hole scattering is largely responsible for the increase in bulk voltage with current. In order to obtain agreement between the numerical solution and the experimental data, the filamentary nature of the double injection current is demonstrated.
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