Abstract
By directly solving the semiconductor differential equations for the double-injection (DI) devices involving two interacting deep levels, the authors studied the negative differential resistance switching characteristic and its relationship with the device dimension, doping level, and dependence on the deep impurity profile. Computer simulation showed that although one can increase the threshold voltage by increasing the device length, the excessive holding voltage that would follow would put this device in a very limited application such as pulse power source. The excessive leakage current in the low conductance state also jeopardizes the attempt to use the device for any practical purpose. Unless there are new materials and deep impurities found that have a large differential hole and electron capture cross sections and a reasonable energy bandgap for low intrinsic carrier concentration, no significant improvement in the fate of DI devices is expected in the near future. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
