A new gated (SCR-like) DI switching device based upon deep impurity trapping and relaxation effects

Abstract

It is well known that double injection (DI) diodes with an appropriately compensated deep impurity whose hole capture cross-section greatly exceeds its electron capture cross-section, can show an N type negative differential resistance and a consequent switching behavior. In the present work gold has been primarily used as the deep impurity in silicon to develop new DI planar configurations which can also be gated. Thus, these devices behave somewhat like the classical SCR, however the characteristics are not based upon junction characteristics but rather arise from the bulk material. Injection and light gating are possible, however the MOS configuration with both cathode and anode gating capability (opposite polarities) is perhaps most interesting. The MOS and injection gates provide respectively, the possibility of either voltage or current gating. The threshold voltage is simply controlled by the square of the interelectrode spacing, and the current handling capacity depends upon the electrode width.