Abstract
Many impurities in silicon have multiple energy levels lying deep in the energy gap. Such impurities may determine electron and hole trapping and recombination under non-equilibrium carrier conditions. Models for the deep energy levels and for the capture processes are described. Experimental techniques for the measurement of electron and hole capture cross-sections are compared and their relative merits considered. The present knowledge of capture cross-sections of deep impurities in silicon is essentially confined to gold, indium and zinc. Recent studies of these are reviewed, and compared with cross-sections for (a) shallow impurities in silicon and (b) deep impurities in germanium.
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