Double in-plane-gate IZO-based thin-film transistors with pea protein gate dielectrics

Abstract

Double in-plane-gate indium–zinc–oxide (IZO) thin-film transistors (TFTs) using pea protein as the gate dielectric films were fabricated on ITO glass substrates at room temperature. Pea protein, a natural biodegradable solid electrolyte, showed a very high specific gate capacitance of 2.0 μF cm−2 at 1.0 Hz due to the electric-double-layer effect. The field effect mobility, current ON/OFF ratio, and subthreshold swing of the IZO-based TFTs with bottom gate were estimated to be 27.6 cm2 V−1 s−1, 3 × 106, and 167 mV/decade, respectively. Then, a resistor-loaded inverter with a high voltage gain of 18 was investigated. At last, ‘NAND’ logic operation was demonstrated with two in-plane gates as the input terminals. Such double in-plane-gate IZO-based TFTs with pea protein gate dielectrics have potential applications in low-cost electronics.