Abstract
Solution-processed graphene oxide/chitosan composite electrolyte film showed a large specific gate electric-double-layer capacitance of $\sim 3.16~\mu \text{F}$ /cm $^{{\mathsf {2}}}$ at 1 Hz. Indium–zinc-oxide (IZO) homojunction thin-film transistors (TFTs) on paper substrates using such composite electrolytes as gate dielectrics showed a good electrical performance and a high stability. Flexible IZO-based homojunction TFTs showed a high drain current ON/OFF ratio of $\sim \textsf {1.8}\times \textsf {10}^{{\textsf {7}}}$ , a large field-effect mobility of >30 cm $^{{\textsf {2}}}\text{V}^{{-\textsf {1}}}\text{s}^{{-\textsf {1}}}$ , and a low subthreshold swing of 90 mV/decade. At last, a resistor-loaded inverter with a maximal conversion factor of 6.7, and a dual in-plane gate NAND logic operation were also demonstrated on such flexible IZO-based TFTs. Such oxide-based homojunction TFTs on paper substrates have potential applications in next-generation low-cost and portable new-concept electronics.
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