Abstract
Pb1-xSrxS/Pb1-ySryS double heterostructure (DH) lasers were prepared for the first time using a hot wall epitaxy (HWE) system and their operating characteristics were determined. Under pulsed measurement conditions, the operational wavelength for the lasers became as low as 2.07 µm at 140 K. This wavelength is the shortest wavelength ever reported for a IV-VI compound semiconductor laser.
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