Abstract
This paper investigates mixed-signal design for double-gate (DG) FinFET technology using a current-starved voltage controlled oscillator (VCO) as a case study. Design issues of the DG FinFET-based VCO is presented in a comparative perspective with a classical CMOS VCO. The DG FinFET VCO is analyzed for the figures-of-merit like center frequency, frequency-voltage (f-v) characteristics. Statistical process variation analysis is presented to study the variability in DG FinFET VCO. Models are investigated for the f-v characteristics and width quantization-aware modeling has been presented for the FinFET-based VCO. The models can be used for fast design optimization. To the best of the authors' knowledge, this is the first paper that examines DG FinFET technology for circuit-level mixed signal design while presenting a comparative between classical CMOS and DG FinFET technologies.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
