Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration

Abstract

Fabrication of a novel high-voltage double-emitter horizontal current bipolar transistor (HCBT) structure integrated with the standard 0.18-μm CMOS and high-speed HCBT is presented. The device takes advantage of 3-D collector charge sharing to achieve full depletion of the intrinsic collector region and to limit the electric field at the base-collector junction. Transistors with BVCEO = 12.6 V, fT ·BVCEO = 160 GHz·V , and β·VA = 28 700 V are demonstrated. The device is fabricated in HCBT BiCMOS process flow without the use of additional lithography masks and represents a zero-cost solution for integration of a high-voltage bipolar device.