Abstract
Dose dependences of conductivity at a temperature of 78 K for InSb and InAs single crystals under reactor fast neutron, 50 MeV proton and 80 MeV alpha particle irradiation up to a fluence of 10 17 cm -2 are considered. Special attention is given to non-trivial, but little known semi-conductor characteristics in terms of a(F) dependence at large fluences, and also to the versatility of such dependence for all semiconductors. The behaviour of semiconductor materials conductivity dependence on fluence presented here may be used for semiconductor dosemeters characteristic variation forecasting under large fluence measurements and in radiation emergency dosimetry.
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