Abstract
Dose dependences of conductivity at a temperature of 78 K for InSb and InAs single crystals under reactor fast neutron, 50 MeV proton and 80 MeV alpha particle irradiation up to a fluence of 10 17 cm -2 are considered. Special attention is given to non-trivial, but little known semi-conductor characteristics in terms of a(F) dependence at large fluences, and also to the versatility of such dependence for all semiconductors. The behaviour of semiconductor materials conductivity dependence on fluence presented here may be used for semiconductor dosemeters characteristic variation forecasting under large fluence measurements and in radiation emergency dosimetry.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
