Effects of doping and preliminary processing on the magnetically stimulated mobility of dislocations in InSb single crystals

Abstract

The effect of the type of conductivity and the doping level of InSb single crystals on the mobility of fast 60° dislocations in a magnetic field is discovered. It is found that doping of a pure InSb crystal with tellurium (n-type impurity) to 1018 cm−3 reduces the mobility of dislocations to the background level. At the same time, in p-type InSb crystals doped with Ge with the same carrier concentration (1018 cm−3), the magnetoplastic effect is manifested clearly. It is shown that preliminary mechanical loading and, hence, internal stresses in the crystal affect not only the mean path length of dislocations in a magnetic field but also the magnitude of the threshold magnetic field below which the magnetoplastic effect is not observed. Possible reasons for these phenomena are discussed.