Morphology of InSb and GaSb Single Crystals with the Face Effect

Abstract

The face effect has been described [1–11] for InSb and GaSb single crystals grown by Czochralski’s method under conditions that facilitate maximum development of the channel in the billet [7, 8]. The initial material was zone-purified indium antimonide (n ~ 3-5 · 1014 cm-3), together with gallium and antimony of semiconductor grade. The dopes were tellurium (donor) and zinc, cadmium, and germanium (acceptors), which were added to the melt either in elemental form or as appropriate alloys. The seed crystals were oriented on (111) by standard x-ray methods to 1–2°. The crystals were grown as a rule in the B[III] direction. The usual methods were employed to measure the Hall effect of the specific resistance; the thermoelectric emf was measured with a semiautomatic system at 300 and 80–85°K by a method previously described [8, 11].