Abstract
GaSb and InSb single crystals up to a length of 30 mm were grown by the Travelling Heater Method (THM) using a vertical system as well as a horizontal one. The maximum growth rate of inclusion-free 10 mm diameter crystals (GaSb: T = 500°C and InSb: T = 400°C) was 2.5 ± 0.5 mm/day. The influence of various growth parameters on the crystal quality was studied.
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