Abstract
There have been concerns about how far the floating gate based non-volatile flash memory (NVM) can be extended and what will become the future directions of memory development. Several emerging new memories, including magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase-change random access memory (PRAM) and resistance random access memory (RRAM), were studied as candidates for the future memories to solve the disadvantages of conventional memories [1]. Among them, the RRAM devices based on binary metal oxide (BMO) have received considerable research interests due to their advantages of simple device structure, high density, excellent scalability, fast switching speed, low energy consumption, and compatibility with the CMOS technology [2].
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