Advances in Non-Volatile Memory and Storage Technology

Abstract

1 Overview of non-volatile memory technology: markets, technologies and trends R. Bez and A. Pirovano, Micron, Italy Part I Improvements in flash technologies 2 Developments in 3D NAND flash technology R. Shirota, National Chiao Tung University, Taiwan 3 Multi-bit NAND flash memories for ultra high density storage devices R.Micheloni and L. Crippa, PMC-Sierra, Italy 4 Improving embedded flash memory technology: silicon and metal nanocrystals, engineered charge-trapping layers and split-gate memory architectures G. Molas, L. Masoero, CEA-LETI, France, V. Della Marca, ST-Microelectronics, France, G. Gay and B. De Salvo CEA-LETI, France Part II Phase change memory (PCM) and resistive random access memory (RRAM) technologies 5 Phase change memory (PCM) materials and devices S. Raoux, IBM T. J. Watson Research Center, USA 6 Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques M. Longo, National Research Council, Italy 7 Nanowire phase change memory (PCM) technologies: properties and performance M. Longo, National Research Council, Italy 8 Modelling of resistive random access memory (RRAM) switching mechanisms and memory structures K. Kamiya, Kanagawa Institute of Technology, Japan , M. Young Yang, University of Tsukuba, Japan, B. Magyari-Koepe and Y. Nishi, Stanford University, USA and K. Shiraishi, Nagoya University, Japan 9 Metal oxide resistive random access memory (RRAM) technology G. Bersuker and D. C. Gilmer, SEMATECH, USA 10 Conductive bridge random access memory (CBRAM) technology J. R. Jameson and M. Van Buskirk, Adesto Technologies Corporation, USA 11 Memristors for non-volatile memory and other applications G. M. Huang and Y. Ho, Texas A&M University, USA Part III Alternative emerging technologies 12 Molecular, polymer and hybrid organic memory devices (OMDs) A. Kiazadeh and H.Gomes,, Algarve University, Portugal 13 Nano-electromechanical random access memory (RAM) devices W. Kwon, University of California Berkeley, USA 14 Ferroelectric random access memory (FRAM) devices T.Eshita and T.Tamura, Fujitsu Semiconductor Ltd., Japan, and Y. Arimoto, Fujitsu Laboratories Ltd. , Japan 15 Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) technology H. Ohno, T. Endoh, T. Hanyu, Y. Ando and S. Ikeda, Tohoku University, Japan