Dopants diffusion in a thin film SIMOX structure and its computer simulation

Abstract

Oxygen ions with energy 90 or 200 keV and doses of 1.2 or 1.8×10 18 O +/cm 2 respectively were implanted into p-type (100) single crystal wafers followed by annealing at 1300°C for 5 h in a nitrogen environment to form a SIMOX (Separation by IMplanted OXygen) structure. During implantation the substrates were heated and the temperature was maintained at 650°C. 50 and 100 keV As + ions with doses ranging from 10 14 to 10 16/cm 2 were implanted into the SIMOX substrates. After implantation the samples were annealed at 900°C for 30 min or at 1100 or 1200°C for 15 or 20 s. Secondary ion mass spectroscopy (SIMS), Rutherford backscattering and channeling (RBS/C), automatic spreading resistance (ASR), and stripping Hall measurement were used to characterize the electrical properties of the SIMOX samples and the diffusion behavior of the arsenic atoms during the anneal. A computer program simulating dopant diffusion in SIMOX (SODDIS) was implemented, this being based upon the well-known SUPREM III program. Computer simulation and experiment showed (i) the buried SiO 2 layer in SIMOX acts as a very good barrier to dopant diffusion, (ii) the diffusion of arsenic in SIMOX is more rapid than in bulk silicon, and (iii) the electrical activity of the dopant in thin film SIMOX samples is dependent upon the implantation and anneal conditions, and also upon the defects present in the SIMOX material.