Dopant-induced photoresponsivity in coumarin-dye-sensitized nanowire NiO/p-Si heterojunction

Abstract

This article presents dopant-induced photoresponsivity in Coumarin (CO)-dye-sensitized nanowire NiO/p-Si. The photoresponse modulation of Al/CO doped NiO/p-Si/Al heterojunction relates to different configurations of NiO under light. This performance is controlled by different concentration of CO-doping based on calcination and carbon (C) incorporation of NiO. Some electronic parameters are determined (the rectification ratio RR, the engineered ideality factor n and barrier height φb). CO doped NiO/p-Si photodiode can be designed as light-switchable systems with the tunable ON and OFF states. The capacitance (C)-time (s) measurements show that the heterojunction has photocapacitive behavior as a result of the doping amount of CO in NiO. Results show that we should pay more attention to the influence of CO dye on metal oxides and/or NiO for the optical switching devices and photodiode.